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Bilayer and bulk heterojunction solar cells with functional poly(2,2'-bithiophene) films electrochemically deposited from aqueous emulsion

Identifieur interne : 001113 ( Main/Repository ); précédent : 001112; suivant : 001114

Bilayer and bulk heterojunction solar cells with functional poly(2,2'-bithiophene) films electrochemically deposited from aqueous emulsion

Auteurs : RBID : Pascal:13-0208506

Descripteurs français

English descriptors

Abstract

Ultra thin films of poly(2,2'-bithiophene) with thickness of 11-33 nm were electrochemically deposited on poly(3,4-ethylenedioxithiophene):poly(styrene sulfonic acid) modified indium tin oxide substrates using a new approach for electrochemical synthesis. Ultrasonic emulsification of aqueous perchloric acid and 2,2'-bithiophene monomer is an effective method to disperse this water insoluble monomer in micro droplets that improved the contact with the electrode. Rigorous control of the poly(2,2'-bithiophene) thickness was achieved by controlling the potential applied and the charge during the deposition. We studied thin films solar cells based on poly(2,2'-bithiophene) polymer as bilayer with C60, resulting a power conversion efficiency of 0.3%, and as buffer layer in bulk heterojunction solar cells. We show that poly(2,2'-bithiophene) films influenced positively the open circuit voltage and increased about 1.6 times the short circuit current, increasing the efficiency from 1.3% up to 2.9% from devices without buffer layer or with 11 nm of poly(2,2'-bithiophene), respectively.

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Pascal:13-0208506

Le document en format XML

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<term>Crosslinked polymer</term>
<term>Electrochemical polymerization</term>
<term>Electrodeposition</term>
<term>Emulsion polymerization</term>
<term>Experimental study</term>
<term>Fill factor</term>
<term>Fullerenes</term>
<term>Heterojunction</term>
<term>Open circuit voltage</term>
<term>Organic solar cells</term>
<term>Preparation</term>
<term>Short circuit currents</term>
<term>Size effect</term>
<term>Surface topography</term>
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<term>Ultrathin films</term>
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<div type="abstract" xml:lang="en">Ultra thin films of poly(2,2'-bithiophene) with thickness of 11-33 nm were electrochemically deposited on poly(3,4-ethylenedioxithiophene):poly(styrene sulfonic acid) modified indium tin oxide substrates using a new approach for electrochemical synthesis. Ultrasonic emulsification of aqueous perchloric acid and 2,2'-bithiophene monomer is an effective method to disperse this water insoluble monomer in micro droplets that improved the contact with the electrode. Rigorous control of the poly(2,2'-bithiophene) thickness was achieved by controlling the potential applied and the charge during the deposition. We studied thin films solar cells based on poly(2,2'-bithiophene) polymer as bilayer with C
<sub>60</sub>
, resulting a power conversion efficiency of 0.3%, and as buffer layer in bulk heterojunction solar cells. We show that poly(2,2'-bithiophene) films influenced positively the open circuit voltage and increased about 1.6 times the short circuit current, increasing the efficiency from 1.3% up to 2.9% from devices without buffer layer or with 11 nm of poly(2,2'-bithiophene), respectively.</div>
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<sub>60</sub>
, resulting a power conversion efficiency of 0.3%, and as buffer layer in bulk heterojunction solar cells. We show that poly(2,2'-bithiophene) films influenced positively the open circuit voltage and increased about 1.6 times the short circuit current, increasing the efficiency from 1.3% up to 2.9% from devices without buffer layer or with 11 nm of poly(2,2'-bithiophene), respectively.</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>07</s5>
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<s0>Preparation</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s0>Active layer</s0>
<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>21</s5>
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<s5>21</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s0>Bithiényle polymère</s0>
<s2>NK</s2>
<s4>INC</s4>
<s5>32</s5>
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<fC03 i1="23" i2="X" l="FRE">
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<s4>INC</s4>
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